• DocumentCode
    2506393
  • Title

    Modeling and simulation of InP homojunction solar cells

  • Author

    Yahia, A.H. ; Wanlass, M.W. ; Coutts, T.J.

  • Author_Institution
    Solar Energy Res. Inst., Golden, CO, USA
  • fYear
    1988
  • fDate
    1988
  • Firstpage
    702
  • Abstract
    Modeling and simulation of single-crystal InP homojunction solar cells has been performed using the PC-1D code. Cell design and performance have been optimized using the best available estimates of the various materials parameters. A comparison has been made of the predictions of the PC-1D model to those of other models. The optimum performance is predicted to give an efficiency approaching 21% at AM0. It is shown that in order to describe the performance of actual cells it is necessary to use larger values of the intrinsic carrier concentration and the surface recombination velocity (SRV) than have been reported in the literature. However, even with a near-maximum value of SRV (e.g. 107 cm s-1) is is necessary to reduce the minority carrier diffusion length in the emitter to only 0.01 mu m in order to account for the relatively low quantum efficiency in the blue part of the spectrum. This indicates that improvement in the emitter bulk properties could be much more important than the SRV. Other loss mechanisms are also discussed; in particular, it is shown that recombination in the base, for good quality material, is relatively insignificant.
  • Keywords
    III-V semiconductors; carrier lifetime; diffusion in solids; digital simulation; electron-hole recombination; indium compounds; minority carriers; p-n homojunctions; solar cells; 21 percent; InP homojunction solar cells; PC-1D code; emitter; emitter bulk properties; intrinsic carrier concentration; loss mechanisms; minority carrier diffusion length; quantum efficiency; semiconductor; simulation; single-crystal; surface recombination velocity; Design optimization; Equations; Indium phosphide; Passivation; Photonic band gap; Photovoltaic cells; Predictive models; Radiative recombination; Semiconductor process modeling; Solar energy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
  • Conference_Location
    Las Vegas, NV, USA
  • Type

    conf

  • DOI
    10.1109/PVSC.1988.105793
  • Filename
    105793