• DocumentCode
    2507265
  • Title

    Epitaxial NiSi2 source and drain technology for atomic-scale junction control in silicon nanowire MOSFETs

  • Author

    Migita, Shinji ; Morita, Yukinori ; Mizubayashi, Wataru ; Ota, Hiroyuki

  • Author_Institution
    Nanodevice Innovation Res. Center, Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan
  • fYear
    2010
  • fDate
    10-11 May 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Epitaxial NiSi2 source and drain with dopant segregation technique is applied to silicon nanowire (SNW) MOSFETs. Growth of epitaxial NiSi2 is characterized by self-limiting growth behavior and stability of (111) facets. These features realize the layout of junction edges in atomic-scale. Advantage of epitaxial NiSi2 growth technique is demonstrated by performances of SNW MOSFETs.
  • Keywords
    MOSFET; nanowires; semiconductor doping; semiconductor epitaxial layers; semiconductor junctions; silicon compounds; NiSi2; SNW MOSFET; atomic-scale junction control; dopant segregation; drain technology; epitaxial growth; epitaxial source; junction edge layout; self-limiting growth behavior; silicon nanowire MOSFET; stability; Annealing; Atomic layer deposition; Electrodes; MOSFETs; Nickel; Silicidation; Silicides; Silicon compounds; Very large scale integration; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Junction Technology (IWJT), 2010 International Workshop on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-5866-0
  • Type

    conf

  • DOI
    10.1109/IWJT.2010.5474984
  • Filename
    5474984
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2507265