Polarization and frequency studies of Si MOSFET terahertz detectors

Author

Coquillat, D. ; Schuster, F. ; Dyakonova, N. ; Teppe, F. ; Giffard, B. ; Kopyt, P. ; Takada, T. ; Arakawa, K. ; Hisatake, S. ; Nagatsuma, T. ; Knap, W.

Author_Institution

Lab. Charles Coulomb, Univ. Montpellier 2, Montpellier, France

fYear

2012

fDate

23-28 Sept. 2012

Firstpage

1

Lastpage

2

Abstract

Test chips with Si MOSFETs integrating bow tie antennas are investigated to check the polarization and frequency dependence of THz sensitivity. The azimuthal angle corresponding to the maximum sensitivity changes with the pixel position on the chip. This means that the surrounding pixels affect the bow tie radiation pattern and possibly contribute to the antenna coupling. The frequency dependence suggests the presence of surface modes phenomena in the silicon substrate.

Keywords

MOSFET; antenna radiation patterns; bow-tie antennas; electromagnetic wave polarisation; elemental semiconductors; silicon; submillimetre wave transistors; terahertz wave detectors; MOSFET terahertz detectors; Si; THz sensitivity; antenna coupling; azimuthal angle; bow-tie antenna radiation pattern; frequency dependence; frequency study; polarization dependence; polarization study; silicon substrate; surface mode phenomena; test chips; Detectors; Frequency dependence; Logic gates; Sensitivity; Silicon; Slabs; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on

Conference_Location

Wollongong, NSW

ISSN

2162-2027

Print_ISBN

978-1-4673-1598-2

Electronic_ISBN

2162-2027

Type

conf

DOI

10.1109/IRMMW-THz.2012.6380118

Filename

6380118