Physical and electrical characterization of junction between single-layer graphene (SLG) and Ti prepared by various processes

Author

Liu, W.J. ; Yu, H.Y. ; Tay, B.K. ; Xu, S.H. ; Wang, Y.Y. ; Hu, H.L. ; Shen, Z.X. ; Wei, J. ; Li, M.-F.

Author_Institution

Sch. of EEE, Nanyang Technol. Univ., Singapore, Singapore

fYear

2010

fDate

10-11 May 2010

Firstpage

1

Lastpage

3

Abstract

The junction contact characteristics between single layer graphene (SLG) and Ti, where Ti is prepared by various deposition processes, are investigated physically (via Raman) and electrically (via 2-point or 4-point probe measurement and residual resistance methods). For Ti deposited by electron beam evaporation (EBM) process, there are no noticeable Raman shift and weak D band in Ti junction with SLG. On the other hand, D band and Raman shift becomes visible when Ti is prepared using sputter process, indicating the disorder related defects and the change of lattice constant in graphene. On the electrical property, it is observed that the contact resistance of Ti/graphene prepared by sputter process is larger than that by EBM process, which can be attributed to process induced defect in graphene.

Keywords

electron beam deposition; graphene; sputter deposition; vacuum deposition; Raman shift; Ti; contact resistance; deposition process; electrical characterization; electron beam evaporation process; junction contact characteristics; single layer graphene; sputter process; Conducting materials; Contact resistance; Crystalline materials; Dielectric substrates; Electric variables measurement; Electrical resistance measurement; Optical microscopy; Physics; Plasma temperature; Probes;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology (IWJT), 2010 International Workshop on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-5866-0

Type

conf

DOI

10.1109/IWJT.2010.5475005

Filename

5475005