DocumentCode
2508783
Title
High-efficiency GaAs solar cells from a multiwafer OMVPE reactor
Author
Bertness, K.A. ; Ristow, M. Ladle ; Hamaker, H.C.
Author_Institution
Varian Res. Center, Palo Alto, CA, USA
fYear
1988
fDate
1988
Firstpage
769
Abstract
A p/n GaAs solar cell with 24.0% efficiency under 1-sun global illumination (AM1.5, 1000 W/m2) has been grown in a multiwafer organometallic vapor-phase epitaxy (OMVPE) reactor. This reactor has demonstrated good uniformity both from run to run and within a single run as part of a pilot line for the batch production of high-efficiency GaAs cells. The 24% efficiency value represents the highest efficiency reported to date for any solar cell under these conditions. The improved performance of these cells is believed to be mostly due to careful control of the emitter doping.
Keywords
III-V semiconductors; gallium arsenide; semiconductor growth; solar cells; vapour phase epitaxial growth; 24 percent; GaAs solar cells; emitter doping; global illumination; high efficiency; multiwafer OMVPE reactor; organometallic vapor-phase epitaxy; semiconductor; Costs; Current density; Doping; Epitaxial growth; Gallium arsenide; Inductors; Lighting; Photovoltaic cells; Production; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location
Las Vegas, NV, USA
Type
conf
DOI
10.1109/PVSC.1988.105807
Filename
105807
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