5.4 Watt GaAs MESFET MMIC for phased array radar systems

Author

Marsh, SP ; Clifton, JC ; Vanner, KC ; Cockrill, JR ; Davies, I.

Author_Institution

GEC-Marconi Mater. Technol. Ltd., Towcester, UK

fYear

1997

fDate

24-25 Nov 1997

Firstpage

169

Lastpage

174

Abstract

This paper describes a MMIC that has been designed using the GMMT Medium Power Foundry process which produces 5.4 Watts of power at 9.2 GHz with a PAE of 22%. Integral heatsink technology and power circuit design techniques have facilitated the design of a compact, densely packed circuit occupying 20 mm² of GaAs. The small signal gain of the MMIC is 16 dB, with a 10 dB input match from 9 to 11 GHz. This MMIC is suitable for many X-band applications such as communications networks and safety radiolocation systems, but its high pulsed power output and low phase-gain distortion make it particularly ideal for use in phased array radar systems

Keywords

III-V semiconductors; MESFET integrated circuits; field effect MMIC; gallium arsenide; heat sinks; integrated circuit design; phased array radar; 16 dB; 22 percent; 5.4 W; 9 to 11 GHz; GMMT Medium Power Foundry process; GaAs; GaAs MESFET MMIC; X-band applications; integral heatsink technology; low phase-gain distortion; phased array radar systems; power circuit design techniques; Circuit synthesis; Communication networks; Foundries; Gallium arsenide; Impedance matching; MESFETs; MMICs; Phased arrays; Radar; Safety;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on

Conference_Location

London

Print_ISBN

0-7803-4135-X

Type

conf

DOI

10.1109/EDMO.1997.668593

Filename

668593