DocumentCode
2508976
Title
Theoretical investigation of InP/InGaAs HBTs
Author
Sheng, H. ; Rezazadeh, A.A. ; Wake, D.
Author_Institution
Dept. of Electron. Eng., King´´s Coll., London, UK
fYear
1997
fDate
24-25 Nov 1997
Firstpage
199
Lastpage
204
Abstract
The DC characteristics of InP/InGaAs HBTs with spacer layers are studied using a physics-based analytical model. This model is based on the thermionic-field-emission (tfe) process at the base/emitter (b/e) hetero-interface and the diffusion current in the quasi-neutral region. Current transport with regard to the spacer layer is studied. I-V characteristics of the HBT are then modeled and these results are compared with the measured data
Keywords
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device models; DC characteristics; I-V characteristics; InP-InGaAs; InP/InGaAs HBTs; base/emitter hetero-interface; current transport; diffusion current; physics-based analytical model; quasi-neutral region; spacer layers; thermionic-field-emission; Boundary conditions; Dielectric constant; Diffusion processes; Doping; Electron emission; Equations; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on
Conference_Location
London
Print_ISBN
0-7803-4135-X
Type
conf
DOI
10.1109/EDMO.1997.668599
Filename
668599
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