Designing parameters for RF CMOS

In the wireless telecommunication systems, for increasing interest in RF switch using Complementary Metal Oxide Semiconductor (CMOS) technology, for high frequency is greatly integrated. In this paper, we use the Hafnium-dioxide material as dielectric substrate for designing a model of CMOS which is used for double-gate MOSFET in DP4T RF CMOS switch. This proposed model is compact and robust as well as capable to choose data flow to or from the antennas and work as a transceiver switch. We emphasis on the library consist of cells design with HfO₂. Here we present the results a cell collection that consist of the basic circuit elements requisite for the high frequency subsystems of integrated circuits as characteristic curve, contact resistances present in switches, charge densities, the potential barrier with contacts available in devices with a reason of Hafnium-dioxide.