Effect of isotropic proton irradiation on the performance of ITO/InP solar cells

Author

Pearsall, N.M. ; Goodbody, C. ; Oparaku, O. ; Dollery, A.A. ; Hill, R.

Author_Institution

Dept. of Phys., Newcastle Polytech., Newcastle upon Tyne, UK

fYear

1988

fDate

1988

Firstpage

898

Abstract

Results of proton exposure experiments on ITO/InP solar cells, for a range of proton energies between 2 and 50 MeV and for a range of fluences up to 1E12 proton/cm², are presented. The cells are mounted on a rocker during irradiation, to simulate hemispherical isotropic radiation. Data from ITO/InP cells are compared to those for commercially available GaAs and Si cells irradiated under the same conditions. At all proton energies, the ITO/InP cells showed a significantly lower percentage of degradation than the other types of cell. It is concluded that the two types of cell operate in a similar manner. From the data, the ITO/InP structure appears to present the same advantages with respect to radiation resistance as does the homojunction structure.

Keywords

III-V semiconductors; indium compounds; proton effects; solar cells; tin compounds; 2 to 50 MeV; III-V semiconductors; ITO-InP solar cells; InSnO-InP; degradation; isotropic proton irradiation; performance; radiation resistance; Degradation; Gallium arsenide; Indium phosphide; Indium tin oxide; MOCVD; Photovoltaic cells; Protons; Silicon; Substrates; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE

Conference_Location

Las Vegas, NV, USA

Type

conf

DOI

10.1109/PVSC.1988.105833

Filename

105833