DocumentCode
2509696
Title
The evaluation of rear incident proton irradiation on GaAs
Author
Hokuyo, S. ; Matsumoto, H. ; Oda, T. ; Yoshida, S. ; Matsuda, S.
Author_Institution
Mitsubishi Electr. Corp., Hyogo, Japan
fYear
1988
fDate
1988
Firstpage
979
Abstract
Proton radiation effects on AlGaAs/GaAs solar cells through the rear surface are described. Because the AlGaAs/GaAs solar cell has an active region of several microns thickness, the GaAs substrate works as shielding for proton radiation through the rear surface. The shallow active region close to the surface is due to the large light absorption coefficient and short diffusion length of gallium arsenide. The results of the rear-incident proton radiation tests confirm the shielding effect of the gallium arsenide substrate.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; proton effects; solar cells; AlGaAs-GaAs solar cells; diffusion length; light absorption coefficient; rear incident proton irradiation; shallow active region; shielding; Absorption; Gallium arsenide; Performance evaluation; Photovoltaic cells; Proton radiation effects; Radiation effects; Satellites; Substrates; Testing; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location
Las Vegas, NV, USA
Type
conf
DOI
10.1109/PVSC.1988.105851
Filename
105851
Link To Document