DocumentCode
2509715
Title
Photon degradation of AlGaAs/GaAs solar cells
Author
Anspaugh, Bruce ; Kachare, Ram ; Iles, Peter
Author_Institution
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fYear
1988
fDate
1988
Firstpage
985
Abstract
The behavior of GaAs solar cells after photon illumination for a prolonged exposure time is presented. More than 55 OMCVD AlGaAs/GaAs solar cells were exposed for over 400 h to AM0 photons at 29 degrees C in three separate, well-controlled runs. Significant degradation of solar cell efficiency was observed in two out of three runs. Although noticeable losses in the open-circuit voltage, fill factor, and maximum power were observed, no change in the short-circuit current was found. In one of the runs, no change was seen in either the test cells or the control cells. Each cell in this run was protected with a coverglass. The cells in this run had thicker buffer layers and thinner window layers than the cells in the other two runs.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; radiation effects; solar cells; AlGaAs-GaAs solar cells; OMCVD; buffer layers; coverglass; efficiency; fill factor; maximum power; open-circuit voltage; photon degradation; photon illumination; short-circuit current; window layers; Application software; Buffer layers; Degradation; Fixtures; Gallium arsenide; Lighting; Photovoltaic cells; Protection; Solar energy; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location
Las Vegas, NV, USA
Type
conf
DOI
10.1109/PVSC.1988.105852
Filename
105852
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