• DocumentCode
    2509715
  • Title

    Photon degradation of AlGaAs/GaAs solar cells

  • Author

    Anspaugh, Bruce ; Kachare, Ram ; Iles, Peter

  • Author_Institution
    Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
  • fYear
    1988
  • fDate
    1988
  • Firstpage
    985
  • Abstract
    The behavior of GaAs solar cells after photon illumination for a prolonged exposure time is presented. More than 55 OMCVD AlGaAs/GaAs solar cells were exposed for over 400 h to AM0 photons at 29 degrees C in three separate, well-controlled runs. Significant degradation of solar cell efficiency was observed in two out of three runs. Although noticeable losses in the open-circuit voltage, fill factor, and maximum power were observed, no change in the short-circuit current was found. In one of the runs, no change was seen in either the test cells or the control cells. Each cell in this run was protected with a coverglass. The cells in this run had thicker buffer layers and thinner window layers than the cells in the other two runs.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; radiation effects; solar cells; AlGaAs-GaAs solar cells; OMCVD; buffer layers; coverglass; efficiency; fill factor; maximum power; open-circuit voltage; photon degradation; photon illumination; short-circuit current; window layers; Application software; Buffer layers; Degradation; Fixtures; Gallium arsenide; Lighting; Photovoltaic cells; Protection; Solar energy; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
  • Conference_Location
    Las Vegas, NV, USA
  • Type

    conf

  • DOI
    10.1109/PVSC.1988.105852
  • Filename
    105852