DocumentCode
2510631
Title
Formation of the Si-Schottky junctions by simple electrochemical process and verification of their characteristics by TCAD
Author
Mondal, S.S.
Author_Institution
Dept. of ECE, Asansol Eng. Coll., Asansol
fYear
2008
fDate
21-24 Nov. 2008
Firstpage
731
Lastpage
733
Abstract
A very simple electrochemical process is used to deposit platinum (Pt) and nickel (Ni) on silicon (Si) substrate to form Schottky junction. The electrical behaviors of these Schottky junctions are observed. We also used TCAD (SILVACO 3.2) to fabricate these Schottky junctions and to observe the electrical behavior of these devices, and it shows that experimental and simulated results are close.
Keywords
Schottky barriers; electrochemical analysis; elemental semiconductors; metallic thin films; nickel; platinum; silicon; technology CAD (electronics); Ni; Pt; SILVACO 3.2; Si; Si-Schottky junction formation; TCAD; electrochemical process; nickel; platinum; silicon substrate; Chemical analysis; Crystallization; Electrochemical processes; Electrodes; Nickel; Semiconductor thin films; Silicon; Sputtering; Substrates; Water heating;
fLanguage
English
Publisher
ieee
Conference_Titel
Recent Advances in Microwave Theory and Applications, 2008. MICROWAVE 2008. International Conference on
Conference_Location
Jaipur
Print_ISBN
978-1-4244-2690-4
Electronic_ISBN
978-1-4244-2691-1
Type
conf
DOI
10.1109/AMTA.2008.4763041
Filename
4763041
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