• DocumentCode
    2510961
  • Title

    Experimental thermal characterization of VLSI packages

  • Author

    Shope, D.A. ; Fahey, W.J. ; Prince, J.L. ; Staszak, Z.J.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA
  • fYear
    1988
  • fDate
    10-12 Feb 1988
  • Firstpage
    19
  • Lastpage
    24
  • Abstract
    To insure optimum performance of circuits, highly accurate measurements are needed to characterize the thermal performance of very large-scale integrated circuit (VLSI) packages. To do this, a temperature-sensitive device inside the package is measured after calibrating the devices with respect to temperature variations. The different methodologies used to calibrate packaged devices are described. The method used as a basis is: to apply a constant forward current to a p-n junction and to measure the change in voltage across the junction due to a change in temperature. This p-n junction voltage is referred to as the temperature-sensitive parameter (TSP). The range of temperatures was limited to a 100°C range. Equipment used included current sources, thermocouples, thermal measurement instrumentation, thermal environment controllers, and test devices. It was concluded that the voltage measured across a conducting semiconductor junction can serve as an excellent temperature-sensitive parameter for the thermal characterization of VLSI packages. It is easily measured and well behaved, i.e., linear with temperature change over a wide range
  • Keywords
    VLSI; integrated circuit testing; thermal variables measurement; voltage measurement; IC testing; VLSI; VLSI packages; constant forward current; large-scale integrated circuit; linear; p-n junction voltage; temperature-sensitive parameter; thermal environment controllers; thermal performance; thermocouples; voltage measurement; Current measurement; Instruments; Integrated circuit measurements; Integrated circuit packaging; P-n junctions; Temperature distribution; Testing; Thermal conductivity; Very large scale integration; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Thermal and Temperature Measurement Symposium, 1988. SEMI-THERM IV., Fourth Annual IEEE
  • Conference_Location
    San Diego, CA
  • Type

    conf

  • DOI
    10.1109/SEMTHE.1988.10592
  • Filename
    10592