A PHEMT MMIC broad-band power amplifier for LMDS

Author

Kim, Young-Gi ; Maeng, Sung-Jae ; Lee, Jin-Hee ; Park, Chul-Soon

Author_Institution

Dept. of Data Commun., Anyang Univ., Kyungki-Do, South Korea

fYear

1998

fDate

9-12 Aug 1998

Firstpage

121

Lastpage

124

Abstract

A two-stage monolithic microwave integrated circuits (MMIC) broad-band power amplifier with AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) has been developed for the up-link and down-link applications for local multipoint distribution systems (LMDS) in the frequency range of 24 ~28 GHz. The amplifier has a small signal gain of 18.6 dB at 24.5 GHz and 16.7 dB at 27.1 GHz. It achieved output powers of 19.8 dBm with PAE of 19.8% at 24.5 GHz and 18.8 dBm at 27.1 GHz

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; aluminium compounds; gallium arsenide; indium compounds; radio links; wideband amplifiers; 16.7 dB; 18.6 dB; 19.8 percent; 24 to 28 GHz; AlGaAs-InGaAs-GaAs; III V semiconductor; Ka-band; LMDS; MMIC; MMIC broad-band power amplifier; PHEMT; SHF; down-link; frequency range; local multipoint distribution systems; monolithic microwave integrated circuits; output power; power added efficiency; pseudomorphic high electron mobility transistor; resistive parallel feedback; small signal gain; two-stage power amplifier; up-link; Application specific integrated circuits; Distributed amplifiers; High power amplifiers; Indium gallium arsenide; MMICs; Microwave amplifiers; Microwave integrated circuits; Monolithic integrated circuits; PHEMTs; Power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio and Wireless Conference, 1998. RAWCON 98. 1998 IEEE

Conference_Location

Colorado Springs, CO

Print_ISBN

0-7803-4988-1

Type

conf

DOI

10.1109/RAWCON.1998.709151

Filename

709151