A two stage, monolithic integrated 200 mW HEMT amplifier for wireless ATM

Author

Bos, Thomas A. ; Lott, Urs ; Bachtold, Werner

Author_Institution

Lab. for EM Fields & Microwave Electron., Fed. Inst. of Technol., Zurich, Switzerland

fYear

1998

fDate

9-12 Aug 1998

Firstpage

125

Lastpage

128

Abstract

For wireless LAN applications a compact two stage HEMT amplifier is designed and on-wafer measured with on-chip matching and bias networks. At 17.2 GHz the amplifier delivers 23.1 dBm saturated output power from a 3.3 V supply. At the 1 dB compression point of 20.4 dBm the amplifier has 13.1 dB gain. Measured performance of the amplifier proves the applicability up to 20 GHz. The amplifier having a low output reflection coefficient is suitable as driver stage for amplifiers with higher power outputs

Keywords

HEMT integrated circuits; MMIC power amplifiers; asynchronous transfer mode; wireless LAN; 13.1 dB; 17.2 GHz; 20 GHz; 200 mW; 3.3 V; bias networks; driver stage; higher power outputs; low output reflection coefficient; on-chip matching; performance; two stage monolithic integrated 200 mW HEMT amplifier; wireless ATM; wireless LAN applications; Broadband amplifiers; Circuit simulation; Driver circuits; Frequency; HEMTs; High power amplifiers; Impedance matching; Power amplifiers; Power generation; Wireless LAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio and Wireless Conference, 1998. RAWCON 98. 1998 IEEE

Conference_Location

Colorado Springs, CO

Print_ISBN

0-7803-4988-1

Type

conf

DOI

10.1109/RAWCON.1998.709152

Filename

709152