A tested design tool for multi-barrier resonant tunnelling devices with high frequency applications

Author

Lynch, M.A. ; Buckle, P.D. ; Kuo, C.Y. ; Truscott, W.S.

Author_Institution

Dept. of Electr. Eng. & Electron., Univ. of Manchester Inst. of Sci. & Technol., UK

fYear

1997

fDate

24-25 Nov 1997

Firstpage

249

Lastpage

254

Abstract

Three self-consistent quantum mechanical design tools are presented that can predict the relative energies of quasi-confined energy levels as a function of bias to better than 3 meV. Results from this model are compared with experimental current-voltage data obtained from a series of GaAs-Al_0.53Ga₆₇As triple barrier resonant tunnelling structures. Three features are explained using this model. Activation energies between 10 and 29 meV were obtained for a thermally-activated tunnelling peak with experimental and theoretical values agreeing to within 2 meV. Other features also occur at biases close to theoretical predictions

Keywords

energy states; resonant tunnelling devices; semiconductor device models; submillimetre wave devices; GaAs-Al_0.53Ga₆₇As; activation energies; bias; current-voltage data; design tool; high frequency applications; model; multi-barrier resonant tunnelling devices; quasi-confined energy levels; self-consistent quantum mechanical tools; thermally-activated tunnelling peak; Diodes; Electrons; Energy states; Frequency; Gallium arsenide; Poisson equations; Quantum cascade lasers; Relativistic quantum mechanics; Resonant tunneling devices; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on

Conference_Location

London

Print_ISBN

0-7803-4135-X

Type

conf

DOI

10.1109/EDMO.1997.668610

Filename

668610