Phase-shifted 1.3-µm dual-mode laser diode: Toward single chip terahertz emitter

Author

Kim, Namje ; Han, Sang-Pil ; Ko, Hyunsung ; Ryu, Han-Cheol ; Park, Jeong-Woo ; Lee, Donghun ; Jeon, Min Yong ; Park, Kyung Hyun

Author_Institution

THz Photonics Creative Res. Center, ETRI, Daejeon, South Korea

fYear

2012

fDate

23-28 Sept. 2012

Firstpage

1

Lastpage

2

Abstract

We have developed the λ/4 phase-shifted 1.3-μm dual mode laser as an optical beat source of continuous-wave (CW) terahertz (THz) generation. The mode beat frequency is continuously tuned from 230 to 1485 GHz via integrated micro-heaters. The CW THz system is also demonstrated with low-temperature-grown InGaAs photomixers.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; micro-optics; optical phase shifters; semiconductor lasers; terahertz wave generation; λ/4 phase-shifted dual mode laser; InGaAs; continuous tuning; continuous-wave terahertz generation; integrated microheaters; low-temperature-grown InGaAs photomixers; optical beat source; phase-shifted dual-mode laser diode; single chip terahertz emitter; wavelength 1.3 mum; Indium gallium arsenide; Optical amplifiers; Optical device fabrication; Optical fibers; Optical polarization; Tuning;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on

Conference_Location

Wollongong, NSW

ISSN

2162-2027

Print_ISBN

978-1-4673-1598-2

Electronic_ISBN

2162-2027

Type

conf

DOI

10.1109/IRMMW-THz.2012.6380329

Filename

6380329