DocumentCode
2511967
Title
Temperature dependence of terahertz radiation detection by field effect transistors
Author
Klimenko, O.A. ; Teppe, F. ; Knap, W. ; Iniguez, B. ; Coquillat, D. ; Mityagin, Y.A. ; Dyakonova, N.V. ; Videlier, H. ; Lime, F. ; Marczewski, J. ; Kucharski, K.
Author_Institution
GIS-TERALAB, Univ. Montpellier 2, Montpellier, France
fYear
2012
fDate
23-28 Sept. 2012
Firstpage
1
Lastpage
2
Abstract
We have measured the Terahertz photoresponse of three types of FETs as a function of the temperature, to study the change of the dominant current mechanism. For all of them we have compared the photoresponse with its DC transfer characteristics, which is directly proportional to the conductivity.
Keywords
field effect transistors; terahertz wave detectors; DC transfer characteristics; dominant current mechanism; field effect transistors; temperature dependence; terahertz photoresponse; terahertz radiation detection; FETs; Logic gates; Plasma temperature; Temperature; Temperature dependence; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on
Conference_Location
Wollongong, NSW
ISSN
2162-2027
Print_ISBN
978-1-4673-1598-2
Electronic_ISBN
2162-2027
Type
conf
DOI
10.1109/IRMMW-THz.2012.6380333
Filename
6380333
Link To Document