Hydrogen passivation of large-area polycrystalline silicon solar cells by high-current ion implantation

The fabrication of highly efficient, large-area polycrystalline silicon solar cells using ion implantation as a hydrogen passivation technique is presented. The development of a high-current ion implanter with a bucket-type ion source to hydrogenate crystal defects in cast polycrystalline cells is also presented. Effective hydrogen passivation of the defects is realized by implanting hydrogen ions into the back surface of the cells and increasing the hydrogen ion energy and dose. The results show that the polycrystalline cells exhibit a high conversion efficiency of 15.2% for a large area of 100 cm².