High-resolution self-consistent thermal modelling of multi-gate power GaAs MESFETs

Author

Ghione, G. ; Naldi, C.U.

Author_Institution

Dipartimento di Elettronica, Politecnico di Milano, Italy

fYear

1989

fDate

3-6 Dec. 1989

Firstpage

147

Lastpage

150

Abstract

A DC and small-signal self-consistent thermal physical model for power GaAs MESFETs is presented. The high-resolution coupled electrothermal two-dimensional simulation is carried out on the active region only, while the large-scale outward heat flow through the boundary of the simulated region is accounted for by means of distributed thermal resistances. To provide such boundary conditions, but also as an independent design tool, a novel analytical thermal resistance model for multigate power MESFETs is introduced. Results from both models are discussed and compared with measurements.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; power transistors; semiconductor device models; DC models; GaAs; MESFETs; active region; analytical thermal resistance model; design tool; distributed thermal resistances; high-resolution coupled electrothermal two-dimensional simulation; large-scale outward heat flow; multigate power MESFETs; simulated region; small-signal self-consistent thermal physical model; Analytical models; Electric resistance; Gallium arsenide; Heat sinks; MESFETs; Resistance heating; Spatial resolution; Temperature; Thermal conductivity; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1989.74248

Filename

74248