Modeling aspects of current calculation of 4H-SiC Schottky diode

This paper present modeling aspects for 4H-SiC Schottky diode using drift diffusion model. Drift diffusion model consists of the current continuity equations for electrons and holes, Poissonpsilas equation and the equations for electron and hole currents. Using this model physical surface trait, state of art of device has been extracted to understand the current condition of 4H-SiC Schottky barrier diode. In Schottky diodes current transport takes place by three mechanisms, diffusion of carriers from the semiconductor into the metal, thermionic emission of carriers across the Schottky barrier and quantum-mechanical tunneling through the barrier. For these three mechanisms current calculation using drift diffusion model has been done.