Effect of stone-wales defects and edge roughness on the switching and frequency performance of graphene nanoribbon-FET

Author

Saha, A.K. ; Saha, Gobinda ; Harun-ur Rashid, A.B.M.

Author_Institution

Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh

fYear

2014

fDate

20-22 Dec. 2014

Firstpage

96

Lastpage

99

Abstract

The novel electronic properties of graphene nanoribbons (GNRs) including purely two-dimensional structure along with its tunable bandgap have led to intense research into possible applications of this material in nanoscale devices. However, as yet, dimensions of its possibilities in practical device levels have remained inconsistent. In this paper we propose a model for GNR-FET that is made from only Armchair GNRs. Our complete NEGF-based simulation reveals its potential for fast digital electronics with On/Off ratio up to 103, transconductance of 8.5×10³ nS/nm which lead to a analog operational frequency up to 3.3THz. The effects of Stone-Wales defects and Edge Roughness in GNRs have been analysed here that shows switching and frequency performance degradation of such GNR-FETs.

Keywords

Green´s function methods; crystal defects; field effect transistors; graphene devices; microwave transistors; nanoribbons; semiconductor device models; Armchair GNR; C; GNR-FET; NEGF-based simulation; Stone-Wales defects; analog operational frequency; digital electronics; edge roughness; electronic properties; field effect transistors; graphene nanoribbon; nanoscale devices; nonequilibrium Green´s function; tunable bandgap; Cutoff frequency; Field effect transistors; Graphene; Logic gates; Materials; Performance evaluation; Photonic band gap; Armchair GNR; Edge Roughness; GNR-FET; NEGF; Stone-Wales Defects;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Computer Engineering (ICECE), 2014 International Conference on

Conference_Location

Dhaka

Print_ISBN

978-1-4799-4167-4

Type

conf

DOI

10.1109/ICECE.2014.7026932

Filename

7026932