Microfabricated single crystal silicon transmission lines

Author

Kudrle, T.D. ; Neves, H.P. ; MacDonald, N.C.

Author_Institution

Phillips Hall, Cornell Univ., Ithaca, NY, USA

fYear

1998

fDate

9-12 Aug 1998

Firstpage

269

Lastpage

272

Abstract

A novel approach to the transmission of microwave energy is demonstrated on standard (resistivity=1-20 ohm-cm) silicon. The transmission lines consist of pairs of parallel-plate waveguides, each waveguide formed from two deep (150 μm) suspended single crystal silicon (SCS) beams. This transmission is achieved through the integration of SCREAM (single crystal reactive etching and metallization) technology adapted for very high aspect ratio structures with thick copper sputter deposition. The integration of these processes allows for the deposition of thick (>.5 μm) metal on the sidewalls and attenuation characteristics better than 0.17 dB/mm over the 10-48 GHz frequency range

Keywords

elemental semiconductors; etching; high-frequency transmission lines; metallisation; micromachining; parallel plate waveguides; silicon; sputter deposition; 10 to 48 GHz; SCREAM; Si-Cu; aspect ratio; attenuation characteristics; copper sputter deposition; metallization; microfabrication; microwave energy transmission; parallel plate waveguide; reactive etching; single crystal silicon transmission line; suspended beam; Attenuation; Copper; Etching; Fabrication; Impedance; Microwave technology; Resists; Silicon compounds; Transmission lines; Tuning;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio and Wireless Conference, 1998. RAWCON 98. 1998 IEEE

Conference_Location

Colorado Springs, CO

Print_ISBN

0-7803-4988-1

Type

conf

DOI

10.1109/RAWCON.1998.709188

Filename

709188