DocumentCode
2514326
Title
Spiral inductor substrate loss modeling in silicon RF ICs
Author
Kuhn, William B. ; Yanduru, Naveen K.
Author_Institution
Dept. of Electr. & Comput. Eng., Kansas State Univ., Manhattan, KS, USA
fYear
1998
fDate
9-12 Aug 1998
Firstpage
305
Lastpage
308
Abstract
Spiral inductors constructed in silicon IC technologies possess limited quality factors due to series resistive losses, and losses within the semiconducting substrate. A new model for the less understood substrate losses illustrates how these losses can be minimized, providing quality factor increases of up to 230 percent over un-optimized designs
Keywords
BiCMOS integrated circuits; CMOS integrated circuits; Q-factor; UHF integrated circuits; circuit optimisation; elemental semiconductors; inductors; integrated circuit modelling; losses; lumped parameter networks; radio equipment; silicon; BiCMOS process; RF IC; Si; low-cost CMOS processes; lumped-element-circuit model; optimization; quality factors; semiconducting substrate; series resistive losses; silicon IC technologies; spiral inductor substrate loss modeling; Capacitance; Conductivity; Eddy currents; Inductors; Q factor; Radiofrequency integrated circuits; Resistors; Silicon; Spirals; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio and Wireless Conference, 1998. RAWCON 98. 1998 IEEE
Conference_Location
Colorado Springs, CO
Print_ISBN
0-7803-4988-1
Type
conf
DOI
10.1109/RAWCON.1998.709197
Filename
709197
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