Modern techniques to design wide band power transfer networks and microwave amplifiers on silicon RF Chips

Author

Yarman, B. Siddik

Author_Institution

Dept. of Electr. & Electron. Eng., Istanbul Univ., Istanbul

fYear

2008

fDate

21-24 Nov. 2008

Firstpage

1

Lastpage

4

Abstract

RF performance of 0.18 mum Si processing technology is investigated via designing a single stage microwave amplifier employing the modern design method called ldquoSimplified Real Frequency Technique (SRFT)rdquo. It is demonstrated 0.18 mum Si processing technology can be utilized to design ultra wideband amplifiers over the frequency band of 11.2 GHz to 22.3 GHz.

Keywords

MMIC power amplifiers; integrated circuit design; power integrated circuits; silicon; ultra wideband technology; RF performance; Si; class A power amplifier; frequency 11.2 GHz to 22.3 GHz; silicon RF chips; simplified real frequency technique; single stage microwave amplifier; size 0.18 mum; ultra wideband amplifier; wide band power transfer networks; Broadband amplifiers; Design methodology; Microwave amplifiers; Microwave technology; Microwave theory and techniques; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Silicon; Ultra wideband technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Recent Advances in Microwave Theory and Applications, 2008. MICROWAVE 2008. International Conference on

Conference_Location

Jaipur

Print_ISBN

978-1-4244-2690-4

Electronic_ISBN

978-1-4244-2691-1

Type

conf

DOI

10.1109/AMTA.2008.4763276

Filename

4763276