DocumentCode
2515597
Title
Infrared imaging and backside failure analysis techniques on multilayer CMOS technology
Author
Chen, Steven ; Shinseki, Brian ; Barutha, Cynthia ; Kha, Ty
Author_Institution
Intel Corp., Chandler, AZ, USA
fYear
1997
fDate
21-25 Jul 1997
Firstpage
17
Lastpage
20
Abstract
Infrared (IR) laser scanning microscopy (LSM) techniques have been characterized and developed to provide better root cause backside failure analysis (BFA) on products fabricated on multilayer CMOS technology. Spectral transmission studies, backside substrate thinning techniques, and examples of backside IR LSM fault isolation techniques applied on high performance microprocessors will be presented in this paper
Keywords
CMOS digital integrated circuits; failure analysis; infrared imaging; microprocessor chips; backside failure analysis; fault isolation; infrared imaging; laser scanning microscopy; microprocessor; multilayer CMOS technology; spectral transmission; substrate thinning; CMOS technology; Doping; Failure analysis; Infrared imaging; Isolation technology; Microprocessors; Nonhomogeneous media; Optical imaging; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical & Failure Analysis of Integrated Circuits, 1997., Proceedings of the 1997 6th International Symposium on
Print_ISBN
0-7803-3985-1
Type
conf
DOI
10.1109/IPFA.1997.638066
Filename
638066
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