DocumentCode
2516589
Title
Electric Field Properties of CdTe Nuclear Detectors
Author
Cola, A. ; Farella, I. ; Mancini, A.M. ; Donati, A.
Author_Institution
IMM/CNR, Unit of Lecce
Volume
6
fYear
2006
fDate
Oct. 29 2006-Nov. 1 2006
Firstpage
3772
Lastpage
3777
Abstract
Recently, diode-like In/CdTe/Pt detectors have been realized which look very promising thanks to their enhanced spectroscopic performance. Scope of this work is to investigate the electric field distribution inside these detectors and its temporal evolution by means of the Pockels effect. The implemented set-up allows us to map the electric field and thus to extract the field profiles between the contacts. The analysis shows that the field is mainly confined below the anode. After applying the bias, these detectors are not very stable at room temperature, and they present a pronounced degradation in spectroscopic performance. This degradation is correlated in this work to the evolution of the electric field which has been observed to ´move´ towards the anode. We attribute this ´polarization´ behavior in CdTe detectors to the concomitance of two factors: the presence of deep levels in the bulk material, and the high hole barrier height of In on CdTe.
Keywords
II-VI semiconductors; X-ray detection; cadmium compounds; electric field effects; gamma-ray detection; semiconductor counters; CdTe nuclear detector; In-CdTe-Pt; Pockels effect; deep levels; diode-like detectors; electric field distribution; electric field evolution; hole barrier height; polarization behavior; spectroscopic performance; Anodes; Birefringence; Crystals; Degradation; Detectors; Diodes; Face detection; Optical polarization; Spectroscopy; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium Conference Record, 2006. IEEE
Conference_Location
San Diego, CA
ISSN
1095-7863
Print_ISBN
1-4244-0560-2
Electronic_ISBN
1095-7863
Type
conf
DOI
10.1109/NSSMIC.2006.353814
Filename
4179856
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