DocumentCode
2516648
Title
Degradation of body factor (γ) of single gate fully depleted SOI MOSFETs due to short channel effects
Author
Kumar, Anil ; Nagumo, Toshiharu ; Tsutsui, Gen ; Hiramoto, Toshiro
Author_Institution
Inst. of Ind. Sci., Tokyo Univ., Japan
fYear
2004
fDate
4-7 Oct. 2004
Firstpage
58
Lastpage
59
Abstract
In this article, the expression of effective back gate potential for short channel single gate FD SOI MOSFETs is investigated. The expression of γ is obtained analytically for the first time, and it is shown that γ degrades due to the channel effect in FD SOI MOSFETs. The relationship between S factor and γ in short channel single gate FD SOI MOSFET is also clarified.
Keywords
MOSFET; S-parameters; elemental semiconductors; semiconductor device models; silicon-on-insulator; S factor; Si; body factor degradation; effective back gate potential; short channel effects; short channel single gate; single gate fully depleted SOI MOSFET; Back; Capacitance; Computer hacking; Degradation; Fluctuations; Immune system; MOSFETs; Medical simulation; Silicon on insulator technology; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 2004. Proceedings. 2004 IEEE International
Print_ISBN
0-7803-8497-0
Type
conf
DOI
10.1109/SOI.2004.1391554
Filename
1391554
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