• DocumentCode
    2516889
  • Title

    Effect of ionized impurity on the sequential tunneling transfer of an electron through a quantum disk

  • Author

    Ishida, M. ; Yamaguchi, M. ; Sawaki, N.

  • Author_Institution
    Dept. of Electron., Nagoya Univ., Japan
  • fYear
    1998
  • fDate
    19-21 Oct. 1998
  • Firstpage
    34
  • Lastpage
    37
  • Abstract
    The motion of a wavepacket injected into a two dimensional GaAs disk was analysed by solving the time dependent Schrodinger equation with the finite element method. It was found that the presence of an ionized impurity varies the motion of the wavepacket in the disk which results in a modification of the tunneling transfer probability to an electrode connected to the disk. The transfer probability as a function of the position of an impurity is discussed in terms of the probability amplitude of electrons in front of the potential barrier.
  • Keywords
    III-V semiconductors; Schrodinger equation; finite element analysis; gallium arsenide; semiconductor quantum dots; tunnelling; GaAs; finite element method; ionized impurity; potential barrier; quantum disk; sequential tunneling transfer; time dependent Schrodinger equation; transfer probability; wavepacket motion; Electrodes; Electrons; Gallium arsenide; Impurities; Motion analysis; Numerical models; Quantum dots; Schrodinger equation; Shape; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
  • Conference_Location
    Osaka, Japan
  • Print_ISBN
    0-7803-4369-7
  • Type

    conf

  • DOI
    10.1109/IWCE.1998.742701
  • Filename
    742701