DocumentCode
2516889
Title
Effect of ionized impurity on the sequential tunneling transfer of an electron through a quantum disk
Author
Ishida, M. ; Yamaguchi, M. ; Sawaki, N.
Author_Institution
Dept. of Electron., Nagoya Univ., Japan
fYear
1998
fDate
19-21 Oct. 1998
Firstpage
34
Lastpage
37
Abstract
The motion of a wavepacket injected into a two dimensional GaAs disk was analysed by solving the time dependent Schrodinger equation with the finite element method. It was found that the presence of an ionized impurity varies the motion of the wavepacket in the disk which results in a modification of the tunneling transfer probability to an electrode connected to the disk. The transfer probability as a function of the position of an impurity is discussed in terms of the probability amplitude of electrons in front of the potential barrier.
Keywords
III-V semiconductors; Schrodinger equation; finite element analysis; gallium arsenide; semiconductor quantum dots; tunnelling; GaAs; finite element method; ionized impurity; potential barrier; quantum disk; sequential tunneling transfer; time dependent Schrodinger equation; transfer probability; wavepacket motion; Electrodes; Electrons; Gallium arsenide; Impurities; Motion analysis; Numerical models; Quantum dots; Schrodinger equation; Shape; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
Conference_Location
Osaka, Japan
Print_ISBN
0-7803-4369-7
Type
conf
DOI
10.1109/IWCE.1998.742701
Filename
742701
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