Parallel semiconductor device simulation: from power to ´atomistic´ devices

This paper discusses various aspects of the parallel simulation of semiconductor devices on mesh connected MIMD platforms with distributed memory and a message passing programming paradigm. We describe the spatial domain decomposition approach adopted in the simulation of various devices, the generation of structured topologically rectangular 2D and 3D finite element grids and the optimisation of their partitioning using simulated annealing techniques. The development of efficient and scalable parallel solvers is a central issue of parallel simulations and the design of parallel SOR, conjugate gradient and multigrid solvers is discussed. The domain decomposition approach is illustrated in examples ranging from ´atomistic´ simulation of decanano MOSFETs to simulation of power IGBTs rated for 1000 V.