• DocumentCode
    2517011
  • Title

    On the Vth controllability for 4-terminal double-gate MOSFETs

  • Author

    Masahara, M. ; Liu, Y.X. ; Sakamoto, K. ; Endo, K. ; Ishii, K. ; Matsukawa, T. ; Hosokawa, S. ; Sekigawa, T. ; Tanoue, H. ; Yamauchi, H. ; Kanemaru, S. ; Suzuki, E.

  • Author_Institution
    Nanoelectron. Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan
  • fYear
    2004
  • fDate
    4-7 Oct. 2004
  • Firstpage
    100
  • Lastpage
    101
  • Abstract
    We investigate the Vth controllability of the 4-terminal DG-MOSFET (4T-DGFET). We presented a simple and comprehensible model for the 4T-DGFET and made clear the Vth controllability in connection with the initial Vth in the DG-mode. These results discussed here are useful for the 4T-DGFET device and circuit design.
  • Keywords
    MOSFET; controllability; semiconductor device models; 4-terminal double gate MOSFET device design; circuit design; double gate mode; metal-oxide semiconductor field effect transistors; voltage controllability; Circuits; Controllability; Energy consumption; Explosions; Fabrication; Insulation; MOSFETs; Silicon compounds; Very large scale integration; Virtual manufacturing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2004. Proceedings. 2004 IEEE International
  • Print_ISBN
    0-7803-8497-0
  • Type

    conf

  • DOI
    10.1109/SOI.2004.1391573
  • Filename
    1391573
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2517011