DocumentCode
2517209
Title
Temperature Transients In Normal And Giant Magneto-resistance Memory Cells
Author
Pohm, A.V. ; Comstock, C.S. ; Kohl, C.E. ; Ranrnuthu, I. ; Ranmuthu, K.T.M.
Author_Institution
Nonvolatile Electronics
fYear
1993
fDate
22-24 Jun 1993
Firstpage
5
Lastpage
7
Keywords
Anisotropic magnetoresistance; Dielectric materials; Magnetic anisotropy; Magnetic materials; Perpendicular magnetic anisotropy; Sheet materials; Silicon compounds; Steady-state; Temperature; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Nonvolatile Memory Technology Review, 1993
Print_ISBN
0-7803-1290-2
Type
conf
DOI
10.1109/NVMT.1993.696936
Filename
696936
Link To Document