Power electronics devices modeling by traditional equivalent circuit and black-box theory

With the application of semiconductor switch in power systems, wideband modeling of related devices is necessary during the recent years. In most cases, simple equivalent circuit models are available to the designers, which correlate well with the measured parameters at lower frequencies, however, deviate at higher frequencies. Black-box modeling can obtain precise results, but the elements in these models have no physical meaning. In order to address these difficulties, this paper presents an efficient method to model the passive devices with traditional equivalent circuit combined with black-box theory. The new method enables the designers to retain their existing physical models while providing a means to capture the high frequency effects accurately.