DocumentCode
2517795
Title
Investigation to suppress hot carrier effect in pocket-implanted nMOSFET by full band Monte Carlo simulation
Author
Tanaka, T. ; Yamaguchi, Satarou ; Yamaguchi, Satarou ; Sukegawa, K. ; Goto, Hiromi
Author_Institution
Technol. Dev. Div., Fujitsu Ltd., Kawasaki, Japan
fYear
1998
fDate
19-21 Oct. 1998
Firstpage
214
Lastpage
217
Abstract
We have clarified two dimensional hot carrier (HC) properties of pocket implanted nMOSFETs by full band Monte Carlo device simulation, and we have shown that the HC generation can be suppressed, keeping better V/sub th/ roll-off, without deterioration of driving capability by properly choosing the pocket implant tilt angle. We have also confirmed this by measurements of gate and substrate currents and device lifetime of sub-quarter micron nMOSFETs.
Keywords
MOSFET; Monte Carlo methods; hot carriers; ion implantation; semiconductor device models; semiconductor doping; device lifetime; full band Monte Carlo simulation; gate current; hot carrier; implant tilt angle; pocket-implanted nMOSFET; sub-quarter micron nMOSFETs; substrate current; Charge carrier processes; Drain avalanche hot carrier injection; Electrons; Feedback; Hot carrier effects; Implants; MOSFET circuits; Monte Carlo methods; Steady-state; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
Conference_Location
Osaka, Japan
Print_ISBN
0-7803-4369-7
Type
conf
DOI
10.1109/IWCE.1998.742750
Filename
742750
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