DocumentCode
2517861
Title
Recessed source-drain (S/D) SOI MOSFETs with low S/D extension (SDE) external resistance
Author
Ahn, C.G. ; Cho, W.J. ; Im, K.J. ; Yang, J.H. ; Baek, I.B. ; Baek, S.K. ; Lee, S.J.
Author_Institution
Nanoelectron. Devices Team, Electron. & Telecommun. Res. Inst., Taejeon, South Korea
fYear
2004
fDate
4-7 Oct. 2004
Firstpage
207
Lastpage
208
Abstract
We introduce a novel ultra-thin body (UTB) SOI MOSFET with a recessed source-drain (S/D) structure to solve the high source-drain extension (SDE) external resistance problem. Fabricated devices with 30 nm gate length and 5 nm channel are characterized. By the device simulation, we have shown that devices with a recessed S/D structure have a better electrical properties than those with a elevated S/D structure.
Keywords
MOSFET; elemental semiconductors; masks; semiconductor device models; silicon-on-insulator; 30 nm; 5 nm; Si; device simulation; electrical properties; gate length; recessed source-drain structure; silicon-on-insulator; source-drain extension external resistance; ultrathin body SOI MOSFET; Dry etching; Electric resistance; Electric variables; Fabrication; Immune system; Ion implantation; Length measurement; MOSFETs; Nanoscale devices; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 2004. Proceedings. 2004 IEEE International
Print_ISBN
0-7803-8497-0
Type
conf
DOI
10.1109/SOI.2004.1391619
Filename
1391619
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