DocumentCode
2518632
Title
Measurement and extraction for parameters fχ and γ of noise in bipolar transistors-Based on measuring the power spectral density of noise current
Author
Luo, Tao
Author_Institution
Dept. of Radio Eng., Southeast Univ., Nanjing, China
fYear
1993
fDate
18-20 May 1993
Firstpage
546
Lastpage
548
Abstract
The main part of low-frequency noise in bipolar transistors is the 1/f noise. Its important parameters fχ and γ are considered. A method of measurement and extraction for noise parameters fχ and γ is presented. It is based on low-frequency current noise spectra measurement and on applying the weighted least square method. In the measurement system a fast Fourier transform analyzer is used to measure noise power spectra, and a scanning frequency sine signal method is used to measure the transfer function. Highly accurate results are obtained. An example and results are given
Keywords
1/f noise; bipolar transistors; electric noise measurement; fast Fourier transforms; least squares approximations; semiconductor device noise; spectral analysis; 1/f noise; bipolar transistors; current noise spectra measurement; fast Fourier transform analyzer; low-frequency noise; noise current; noise power spectra; power spectral density; scanning frequency sine signal; transfer function; weighted least square method; Bipolar transistors; Current measurement; Fast Fourier transforms; Frequency measurement; Least squares methods; Low-frequency noise; Noise measurement; Power measurement; Signal analysis; Transfer functions;
fLanguage
English
Publisher
ieee
Conference_Titel
Instrumentation and Measurement Technology Conference, 1993. IMTC/93. Conference Record., IEEE
Conference_Location
Irvine, CA
Print_ISBN
0-7803-1229-5
Type
conf
DOI
10.1109/IMTC.1993.382583
Filename
382583
Link To Document