DocumentCode
2519349
Title
PSP based DCG-FGT transistor Model: Full characterization procedure
Author
Marzaki, A. ; Bidal, V. ; Laffont, R. ; Rahajandraibe, W. ; Portal, J.-M. ; Bouchakour, R.
Author_Institution
ST-Microelectron., Rousset, France
fYear
2012
fDate
2-5 Oct. 2012
Firstpage
222
Lastpage
227
Abstract
Full characterization of a new DCG-FGT (Dual-Control-Gate Floating-Gate Transistor) transistor model for static and transient simulations is presented. The model is running under electrical simulator (ELDO) and is characterized thanks to ICCAP software. It has been validated on an advanced STMicroelectronics technology. The final objective of this work is to provide an accurate and scalable model available in design framework.
Keywords
circuit simulation; semiconductor device models; transistors; ELDO; ICCAP software; PSP based DCG-FGT transistor model; advanced STMicroelectronics technology; design framework; dual-control-gate floating-gate transistor model; electrical simulator; full characterization procedure; static simulation; transient simulation; Capacitance; Current measurement; Integrated circuit modeling; Logic gates; Noise; Nonvolatile memory; Transistors; DCG-FGT transistor; Modeling; calibration model; characterization;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications and Information Technologies (ISCIT), 2012 International Symposium on
Conference_Location
Gold Coast, QLD
Print_ISBN
978-1-4673-1156-4
Electronic_ISBN
978-1-4673-1155-7
Type
conf
DOI
10.1109/ISCIT.2012.6380895
Filename
6380895
Link To Document