Modelling of millimeter wave two terminal devices and related circuits

Author

Rolland, P.A. ; Friscourt, M.R. ; Lippens, D. ; Dalle, C. ; Berbineau, M. ; Haese, N.

Author_Institution

Centre Hyperfrequences et Semicond., Univ. des Sci. et Tech. de Lille Flandres Artois, Villeneuve d´´Ascq, France

fYear

1988

fDate

7-9 June 1988

Firstpage

2291

Abstract

The authors describe a self-consistent modeling of millimeter-wave diodes (GUNN, IMPATT, and p-i-n) for applications such as power sources or limiters. Particular emphasis is placed on temperature rise within the devices to achieve reliable high-power operation. Circuit loading is also considered for a more realistic description of the operating mode. The proposed CAD (computer-aided design) technique has proved to be an efficient tool leading to the design and realization of high-power high-efficiency W-band sources operating at safe temperature rise.<>

Keywords

Gunn diodes; IMPATT diodes; circuit CAD; p-i-n diodes; semiconductor device models; solid-state microwave devices; EHF; Gunn diodes; IMPATT diodes; MM-wave devices; PIN diodes; W-band sources; circuit CAD; circuit loading; limiters; millimeter-wave diodes; modelling; p-i-n diodes; power sources; reliable high-power operation; self-consistent modeling; temperature rise; Frequency; Gunn devices; Impedance; Millimeter wave circuits; Millimeter wave devices; Packaging; Semiconductor diodes; Semiconductor materials; Temperature; Waveguide transitions;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1988., IEEE International Symposium on

Conference_Location

Espoo, Finland

Type

conf

DOI

10.1109/ISCAS.1988.15402

Filename

15402