Circuit reliability simulator-oxide breakdown module

Author

Rosenbaum, E. ; Lee, P.M. ; Moazzami, R. ; Ko, P.K. ; Hu, C.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

1989

fDate

3-6 Dec. 1989

Firstpage

331

Lastpage

334

Abstract

A computer program which generates statistics about circuit failures due to MOS oxide breakdown has been developed. The program, CORS (Circuit Oxide Reliability Simulator), predicts the probability of circuit failure as a function of operating time, temperature, power supply voltage, and input waveforms. It consists of a preprocessor and postprocessor for SPICE. CORS calculates the probability of failure by using the node voltages provided by SPICE and oxide defect statistics provided by the user. The effect of burn-in on oxide reliability can also be simulated. CORS is linked to a hot electron and an electromigration reliability simulator. Simulation results are presented.<>

Keywords

CMOS integrated circuits; MOS integrated circuits; circuit analysis computing; circuit reliability; electric breakdown of solids; failure analysis; CMOS circuits; CORS; MOS circuits; MOS oxide breakdown; SPICE; circuit failures; circuit reliability simulator; computer program; electromigration reliability simulator; hot electron; input waveforms; node voltages; operating time; oxide defect statistics; oxide reliability; postprocessor; power supply voltage; preprocessor; temperature; Circuit simulation; Computational modeling; Electric breakdown; Power supplies; Predictive models; Probability; SPICE; Statistics; Temperature distribution; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1989.74291

Filename

74291