• DocumentCode
    2520544
  • Title

    Electronic conduction properties of TiO2 thin films under UV light irradiation

  • Author

    Watanabe, Yusuke ; Muramoto, Yuji ; Shimizu, Noriyuki

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Meijo Univ., Nagoya, Japan
  • fYear
    2011
  • fDate
    16-19 Oct. 2011
  • Firstpage
    117
  • Lastpage
    120
  • Abstract
    TiO2 has photocatalysis. When UV light is irradiated, electron-hole pairs are generated in TiO2. The source of photocatalysis is oxidation and reduction reactions at the surface due to electrons and holes. Therefore, it is considered that the photocatalytic activities are closely related to electronic properties of the TiO2 under UV light irradiation. In this paper, we obtained Hall voltage properties in anatase TiO2 thin films under UV light irradiation. Furthermore, we successfully separated two current components due to electrons and holes using a new technique. We obtained the following results; 1. The measured values and polarity of the Hall voltage were not stable compared with those of n-type silicon. 2. The current component of electrons was almost the same with that of holes. From these results, it is suggested that the values of electron mobility and hole mobility are close.
  • Keywords
    Hall mobility; catalysis; electron mobility; electron-hole recombination; hole mobility; oxidation; photochemistry; reduction (chemical); semiconductor materials; semiconductor thin films; titanium compounds; ultraviolet radiation effects; Hall voltage properties; TiO2; UV light irradiation; anatase titanium oxide thin films; current electron component; electron mobility; electron-hole pairs; electronic conduction properties; hole mobility; n-type silicon; oxidation reaction; photocatalysis; photocatalytic activity; polarity; reduction reaction; Charge carrier processes; Current measurement; Magnetic field measurement; Magnetic fields; Radiation effects; Semiconductor device measurement; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Insulation and Dielectric Phenomena (CEIDP), 2011 Annual Report Conference on
  • Conference_Location
    Cancun
  • ISSN
    0084-9162
  • Print_ISBN
    978-1-4577-0985-2
  • Type

    conf

  • DOI
    10.1109/CEIDP.2011.6232610
  • Filename
    6232610