DocumentCode
2520544
Title
Electronic conduction properties of TiO2 thin films under UV light irradiation
Author
Watanabe, Yusuke ; Muramoto, Yuji ; Shimizu, Noriyuki
Author_Institution
Dept. of Electr. & Electron. Eng., Meijo Univ., Nagoya, Japan
fYear
2011
fDate
16-19 Oct. 2011
Firstpage
117
Lastpage
120
Abstract
TiO2 has photocatalysis. When UV light is irradiated, electron-hole pairs are generated in TiO2. The source of photocatalysis is oxidation and reduction reactions at the surface due to electrons and holes. Therefore, it is considered that the photocatalytic activities are closely related to electronic properties of the TiO2 under UV light irradiation. In this paper, we obtained Hall voltage properties in anatase TiO2 thin films under UV light irradiation. Furthermore, we successfully separated two current components due to electrons and holes using a new technique. We obtained the following results; 1. The measured values and polarity of the Hall voltage were not stable compared with those of n-type silicon. 2. The current component of electrons was almost the same with that of holes. From these results, it is suggested that the values of electron mobility and hole mobility are close.
Keywords
Hall mobility; catalysis; electron mobility; electron-hole recombination; hole mobility; oxidation; photochemistry; reduction (chemical); semiconductor materials; semiconductor thin films; titanium compounds; ultraviolet radiation effects; Hall voltage properties; TiO2; UV light irradiation; anatase titanium oxide thin films; current electron component; electron mobility; electron-hole pairs; electronic conduction properties; hole mobility; n-type silicon; oxidation reaction; photocatalysis; photocatalytic activity; polarity; reduction reaction; Charge carrier processes; Current measurement; Magnetic field measurement; Magnetic fields; Radiation effects; Semiconductor device measurement; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Insulation and Dielectric Phenomena (CEIDP), 2011 Annual Report Conference on
Conference_Location
Cancun
ISSN
0084-9162
Print_ISBN
978-1-4577-0985-2
Type
conf
DOI
10.1109/CEIDP.2011.6232610
Filename
6232610
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