DocumentCode
2520910
Title
Multi-stack Anodic Bonding Using Two Electrodes and Its Application in Sealing Alkali Metal
Author
Tingkai, Zhang ; Honghai, Zhang ; Zhiyin, Gan
Author_Institution
Sch. of Mech. Sci. & Engneering, Huazhong Univ. of Sci. & Technol., Wuhan, China
fYear
2008
fDate
9-12 Dec. 2008
Firstpage
1277
Lastpage
1282
Abstract
Multi-stack anodic bonding using two electrodes is realized in this paper. The process includes two bonding steps separated by one electrodes reversal. When pre-cleaned substrates of silicon and glass are piled up and heated to predetermined temperature, voltage applied between the top and bottom substrates for bonding the first interface, when this bonding process is finished, the substrates are annealed for few minutes, then electrodes are reversed for bonding another interface. This anodic bonding process provides an efficient way for anodic bonding multi-stacks substrates of silicon and glass piled up alternately, enhances the feasibility of operation and decreases the requirement of relevant apparatus for doing so. Tensile strength testing shows that this bonding method can obtain high quality permanent bonding. Furthermore, this bonding method provides a simple way for bonding silicon- glass stacks for some special use such as sealing alkali metal into cell of glass-silicon-glass structure, in which process the electrodes are directly linked to two glasses. And using this method we successfully sealing alkali metal into the anodic bonded cell.
Keywords
annealing; glass; heat treatment; integrated circuit bonding; silicon; tensile strength; Si-SiO2; annealing; anodic bonded cell; anodic bonding process; bonding steps; electrodes reversal; heating; multistack anodic bonding; permanent bonding; sealing alkali metal; silicon; silicon-glass stacks; tensile strength testing; Annealing; Bonding forces; Bonding processes; Cathodes; Electrodes; Electrostatics; Gallium nitride; Glass; Laboratories; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Packaging Technology Conference, 2008. EPTC 2008. 10th
Conference_Location
Singapore
Print_ISBN
978-1-4244-2117-6
Electronic_ISBN
978-1-4244-2118-3
Type
conf
DOI
10.1109/EPTC.2008.4763606
Filename
4763606
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