DocumentCode
2521130
Title
Unveiling switching mechanisms in RRAMs
Author
Yu, Zhiping ; Wang, Yan
Author_Institution
Inst. of Microelectron., Tsinghua Univ., Beijing, China
fYear
2010
fDate
15-17 Dec. 2010
Firstpage
1
Lastpage
4
Abstract
Resistive random access memories (RRAMs) are deemed as one type of a few promising alternative non-volatile memories (NVMs) to the mainstreamNAND/NOR flash. The switching mechanisms for RRAMs, however, remain murky and a quantitative or semi-empiricalmodel is urgently needed. This talk reviews the status of modeling switching mechanisms in both TMO (transition metal oxide) RRAMs and carbon-based RRAMs, and describes recent research progress at authors´ group in Tsinghua University.
Keywords
NAND circuits; NOR circuits; flash memories; random-access storage; transition metal compounds; NVM; TMO RRAM; carbon-based RRAM; mainstream NAND/NOR flash; non-volatile memories; resistive random access memories; switching mechanisms; transition metal oxide RRAM; Ions; Materials; Mathematical model; Memory management; Metals; Random access memory; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-9997-7
Type
conf
DOI
10.1109/EDSSC.2010.5713731
Filename
5713731
Link To Document