• DocumentCode
    252174
  • Title

    0.7 V supply, 8 nW, 8 ppm/°C resistorless sub-bandgap voltage reference

  • Author

    Mattia, Oscar E. ; Klimach, Hamilton ; Bampi, Sergio

  • Author_Institution
    Microelectron. Grad. Program, Fed. Univ. of Rio Grande do Sul, Porto Alegre, Brazil
  • fYear
    2014
  • fDate
    3-6 Aug. 2014
  • Firstpage
    479
  • Lastpage
    482
  • Abstract
    In this work a new resistorless sub-bandgap voltage reference topology is presented. It is a self-biased and small area circuit that works in the nano-ampere consumption range, and under 1 V of power supply. The behavior of the circuit is analitically described, a design methodology is proposed and simulation results are presented for a standard 0.18 μm CMOS proCess. A reference voltage of 463 mV is demonstrated, with a temperature coefficient of 8 ppm/°C for the 0 to 125 °C range, while the power consumption of the whole circuit is 8.25 nW under a 0.75 V power supply at 27 °C. The estimated silicon area is 0.0043 mm2.
  • Keywords
    CMOS integrated circuits; integrated circuit design; reference circuits; CMOS process; nano-ampere consumption range; power 8 W; power 8.25 nW; power consumption; resistorless sub-bandgap voltage reference topology; self-biased circuit; size 0.18 mum; small area circuit; temperature 0 degC to 125 degC; temperature coefficient; voltage 0.7 V; voltage 0.75 V; voltage 1 V; voltage 463 mV; Logic gates; MOSFET; Power demand; Threshold voltage; Topology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (MWSCAS), 2014 IEEE 57th International Midwest Symposium on
  • Conference_Location
    College Station, TX
  • ISSN
    1548-3746
  • Print_ISBN
    978-1-4799-4134-6
  • Type

    conf

  • DOI
    10.1109/MWSCAS.2014.6908456
  • Filename
    6908456