Process integration of isolated emitter transistors with common emitter heterojunction bipolar transistor circuits

Author

Plumton, D.L. ; Banh, H. ; Woods, B.O. ; Chang, C.T.M.

Author_Institution

Texas Instrum., Dallas, TX, USA

fYear

1989

fDate

3-6 Dec. 1989

Firstpage

393

Lastpage

396

Abstract

The process of integrating two types of AlGaAs-GaAs emitter-down HBTs (heterojunction bipolar transistors), one with isolated emitter and one with grounded emitter, on a common n/sup +/ substrate is described. The use of a selective p/sup -/ implanted region followed by MOCVD (metalorganic chemical vapor deposition) overgrowth has resulted in junction isolation with an emitter-to-emitter blocking voltage greater than approximately 12 V. The characteristics of such integrated HBTs are examined. The advantages and limitations of the isolated emitter HBT to enhance I/O interfaces and introduce linear circuits to an all emitter-down HBT technology are addressed.<>

Keywords

III-V semiconductors; aluminium compounds; bipolar integrated circuits; emitter-coupled logic; gallium arsenide; heterojunction bipolar transistors; integrated circuit technology; AlGaAs-GaAs; I/O interfaces; MOCVD; common emitter heterojunction bipolar transistor circuits; emitter-down HBTs; emitter-to-emitter blocking voltage; grounded emitter; integrated HBTs; isolated emitter; isolated emitter transistors; junction isolation; linear circuits; n/sup +/ substrate; p/sup -/ implanted region; Coupling circuits; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit technology; Isolation technology; Large scale integration; Logic circuits; MOCVD; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1989.74305

Filename

74305