• DocumentCode
    2522970
  • Title

    Band gap narrowing in heavily doped N+ indium phosphide

  • Author

    Tyagi, S.D. ; Singh, K. ; Ghandhi, S.K. ; Borrego, J.M.

  • Author_Institution
    Dept. of Electr. Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
  • fYear
    1991
  • fDate
    7-11 Oct 1991
  • Firstpage
    172
  • Abstract
    The results of measurements of bandgap narrowing in sulfur-doped n +InP are given. The room-temperature photoluminescence spectra of n+InP layers were measured, and from the shift in energy of the photoluminescence peak the authors calculated the bandgap narrowing as a function of doping concentration which was measured using the Hall effect. In addition, bandgap narrowing obtained from the contact potential measurements using C-V characteristics was compared with bandgap narrowing from photoluminescence measurements, and the results show reasonable agreement
  • Keywords
    III-V semiconductors; energy gap; indium compounds; semiconductor doping; solar cells; sulphur; C-V characteristics; Hall effect; InP:S solar cells; bandgap narrowing; contact potential measurements; doping concentration; photoluminescence peak; semiconductor; Capacitance-voltage characteristics; Energy measurement; Hall effect; Indium phosphide; Magnetic field measurement; Photoluminescence; Photonic band gap; Photovoltaic cells; Semiconductor device doping; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
  • Conference_Location
    Las Vegas, NV
  • Print_ISBN
    0-87942-636-5
  • Type

    conf

  • DOI
    10.1109/PVSC.1991.169203
  • Filename
    169203
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2522970