Novel fabrication of integrated submillimeter circuits

Author

Nye, K.W. ; Qun Xiao ; Hesler, J.L. ; Crowe, T.W.

Author_Institution

Appl. Electrophys. Lab., Virginia Univ., Charlottesville, VA, USA

fYear

2002

fDate

26-26 Sept. 2002

Firstpage

65

Lastpage

66

Abstract

Backside wafer processing has been developed for discrete beamlead diodes and beamlead MMICs. Backside etching allows arbitrary substrate geometry. The beamleads are used to make electrical connections to a waveguide block and/or serve as substrateless transmission lines. The fabrication of an 82.5 to 330 GHz MMIC balanced frequency quadrupler is presented.

Keywords

III-V semiconductors; MIMIC; Schottky diodes; etching; frequency multipliers; gallium arsenide; high-frequency transmission lines; integrated circuit interconnections; integrated circuit manufacture; planar waveguides; submillimetre wave integrated circuits; varistors; 82.5 to 330 GHz; GaAs; GaAs sub-mm IC fabrication; MIMIC; MMIC balanced frequency quadrupler; Schottky diodes; arbitrary substrate geometry; backside etching; backside wafer processing; beamlead MMIC; discrete beamlead diodes; frequency multipliers; integrated submillimeter circuits; planar diodes; substrateless transmission lines; varistors; waveguide block electrical connections; Anodes; Circuits; Etching; Fabrication; Frequency; Gallium arsenide; MMICs; Resists; Schottky diodes; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves, 2002. Conference Digest. Twenty Seventh International Conference on

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-7423-1

Type

conf

DOI

10.1109/ICIMW.2002.1076086

Filename

1076086