DocumentCode
2524351
Title
Low-frequency dynamic drain current modeling in AlGaN-GaN HEMTs
Author
Giacomo, V. Di ; Santarelli, A. ; Filicori, F. ; Raffo, A. ; Vannini, G. ; Aubry, R. ; Gaquière, C.
Author_Institution
Eerrara Univ., Eerrara
fYear
2007
fDate
8-10 Oct. 2007
Firstpage
68
Lastpage
71
Abstract
Low-frequency dispersive effects in AlGaN/GaN HEMTs are here modeled above their cutoff frequencies by adopting a modeling approach developed for GaAs PHEMTs. To this aim, a new identification procedure is proposed, which allows to obtain very accurate predictions of the pulsed drain currents, even in the presence of strong kink effects in the DC characteristics. In addition, a dedicated algorithm of data extrapolation is used, in order to make the model more computationally efficient.
Keywords
III-VI semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; AlGaN-GaN; AlGaN-GaN HEMT; GaAs; data extrapolation; low-frequency dispersive effects; low-frequency dynamic drain current; Aluminum gallium nitride; Computational modeling; Cutoff frequency; Dispersion; Extrapolation; Gallium arsenide; Gallium nitride; HEMTs; MODFETs; PHEMTs;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European
Conference_Location
Munich
Print_ISBN
978-2-87487-002-6
Type
conf
DOI
10.1109/EMICC.2007.4412649
Filename
4412649
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