• DocumentCode
    2524549
  • Title

    100 GHz push-push oscillator in 90 nm CMOS technology

  • Author

    Karttaavi, Timo ; Holmberg, Jan

  • Author_Institution
    ITT, Espoo
  • fYear
    2007
  • fDate
    8-10 Oct. 2007
  • Firstpage
    112
  • Lastpage
    114
  • Abstract
    A 100 GHz fixed-tuned oscillator was designed and fabricated using a 90 nm bulk CMOS process. Push-push mode was chosen to improve the power output. The oscillator exhibits -3 dBm output power at 101 GHz with 27 mW power consumption. The measured SSB phase noise is -85 dBc/Hz at 1 MHz offset Resonators are implemented with transmission lines to avoid the need of high quality capacitors and inductors.
  • Keywords
    CMOS integrated circuits; oscillators; resonators; CMOS technology; fixed-tuned oscillator; frequency 100 GHz; push-push oscillator; Amplitude modulation; CMOS process; CMOS technology; Energy consumption; Noise measurement; Oscillators; Phase measurement; Phase noise; Power generation; Transmission line measurements;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European
  • Conference_Location
    Munich
  • Print_ISBN
    978-2-87487-002-6
  • Type

    conf

  • DOI
    10.1109/EMICC.2007.4412660
  • Filename
    4412660