DocumentCode
2524549
Title
100 GHz push-push oscillator in 90 nm CMOS technology
Author
Karttaavi, Timo ; Holmberg, Jan
Author_Institution
ITT, Espoo
fYear
2007
fDate
8-10 Oct. 2007
Firstpage
112
Lastpage
114
Abstract
A 100 GHz fixed-tuned oscillator was designed and fabricated using a 90 nm bulk CMOS process. Push-push mode was chosen to improve the power output. The oscillator exhibits -3 dBm output power at 101 GHz with 27 mW power consumption. The measured SSB phase noise is -85 dBc/Hz at 1 MHz offset Resonators are implemented with transmission lines to avoid the need of high quality capacitors and inductors.
Keywords
CMOS integrated circuits; oscillators; resonators; CMOS technology; fixed-tuned oscillator; frequency 100 GHz; push-push oscillator; Amplitude modulation; CMOS process; CMOS technology; Energy consumption; Noise measurement; Oscillators; Phase measurement; Phase noise; Power generation; Transmission line measurements;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European
Conference_Location
Munich
Print_ISBN
978-2-87487-002-6
Type
conf
DOI
10.1109/EMICC.2007.4412660
Filename
4412660
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