X-Band 11W AlGaN/GaN HEMT power MMICs

Author

Chen, Tangsheng ; Zhang, Bin ; Jiao, Gang ; Ren, Chunjiang ; Chen, Chen ; Shao, Kai ; Yang, Naibin

Author_Institution

Nat. Key Lab. of Monolithic Integrated Circuits & Modules, Nanjing

fYear

2007

fDate

8-10 Oct. 2007

Firstpage

162

Lastpage

164

Abstract

AIGaN/GaN HEMT power MIMIC which is designed in microstrip technology on Sl-SiC substrate is presented in this work. The chip size is only 2.0 mmtimes1.1 mmtimes0.08 mm. The developed two-stage power MMIC operates at frequency between 9.4-10.6 GHz and delivers a pulsed output power of 11.1 W at 9.7 GHz under a drain bias of 30 V. The linear gain of the MMIC is about 10 dB which is much lower than the simulated value of 15 dB. Further optimization of the MMIC processing and circuit design is necessary to improve the performances of the MMIC.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; aluminium compounds; gallium compounds; power HEMT; AlGaN-GaN; HEMT power MMIC; MMIC processing; circuit design; frequency 8 GHz to 12 GHz; microstrip technology; power 11 W; Aluminum gallium nitride; Circuit simulation; Design optimization; Frequency; Gain; Gallium nitride; HEMTs; MMICs; Microstrip; Power generation; AlGaN/GaN; HEMT; Index Terms; MMICs; Microstrip Technology; X-Band;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European

Conference_Location

Munich

Print_ISBN

978-2-87487-002-6

Type

conf

DOI

10.1109/EMICC.2007.4412673

Filename

4412673