A 9.5–10.5GHz 60W AlGaN/GaN HEMT for X-band high power application

Author

Yamamoto, T. ; Mitani, E. ; Inoue, K. ; Nishi, M. ; Sano, S.

Author_Institution

Eudyna devices Inc., Yamanashi

fYear

2007

fDate

8-10 Oct. 2007

Firstpage

173

Lastpage

175

Abstract

In this paper, we report our result of a 60W AlGaN/GaN HEMT with the operating frequency in X-band. The device technology is extension of well-established Eudyna commercial L-/S-band AlGaN/GaN HEMT technology. The device shows output power of over 60W and a high linear gain of 9.6dB in wide frequency range of 9.5-10.5GHz, operating at 40 V drain bias voltage with the pulsed conditions at a duty of 10% with a pulse width of 100 musec. The results show the developed 60W AlGaN/GaN HEMT has high power capability covering practical frequency range for X-band high power applications with proven device technology.

Keywords

aluminium compounds; gallium compounds; high electron mobility transistors; microwave transistors; semiconductor technology; AlGaN-GaN; Eudyna commercial L-/S-band technology; HEMT; X-band high power application; frequency 9.5 GHz to 10.5 GHz; gain 9.6 dB; power 60 W; time 100 mus; voltage 40 V; Aluminum gallium nitride; Fabrication; Frequency; Gain; Gallium nitride; HEMTs; Packaging; Power generation; Space vector pulse width modulation; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European

Conference_Location

Munich

Print_ISBN

978-2-87487-002-6

Type

conf

DOI

10.1109/EMICC.2007.4412676

Filename

4412676